BSM10GP120BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 20A 100W
$120.48
Available to order
Reference Price (USD)
10+
$78.09200
Exquisite packaging
Discount
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Engineered for excellence, the BSM10GP120BOSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The BSM10GP120BOSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the BSM10GP120BOSA1.
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 20 A
- Power - Max: 100 W
- Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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