BSM35GP120BPSA1
Infineon Technologies
Infineon Technologies
LOW POWER ECONO AG-ECONO2C-211
$207.80
Available to order
Reference Price (USD)
1+
$207.80000
500+
$205.722
1000+
$203.644
1500+
$201.566
2000+
$199.488
2500+
$197.41
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, the BSM35GP120BPSA1 IGBT module by Infineon Technologies sets new standards in the Discrete Semiconductor Products market. This power transistor module combines high current density with excellent thermal cycling capability. Its standout features include positive temperature coefficient for easy paralleling and built-in temperature monitoring. The BSM35GP120BPSA1 finds perfect application in electric vehicle charging stations, wind turbine converters, and robotic automation systems. For instance, this module excels in high-power SMPS designs requiring >100kHz switching frequencies. Infineon Technologies continues to lead the IGBT module revolution with innovations like the BSM35GP120BPSA1.
Specifications
- Product Status: Not For New Designs
- IGBT Type: -
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 45 A
- Power - Max: 230 W
- Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 17.5A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 1.5 nF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONO2B
Related Products
Infineon Technologies
FZ2400R12KE3NOSA1
Microchip Technology
APTGT100DH60TG
Microchip Technology
APTGT300DA170G
IXYS
MIXA60HU1200VA
Infineon Technologies
FS100R12N2T7B15BPSA1
Microchip Technology
APTGT400A120D3G
Infineon Technologies
FF150R12KE3B8BPSA1
Infineon Technologies
FP50R12N2T7BPSA2
IXYS
MIXG70W1200TED
Infineon Technologies