FZ750R65KE3C1NOSA1
Infineon Technologies
Infineon Technologies
IHV IHM T XHP 3 3-6 5K
$100,000.00
Available to order
Reference Price (USD)
1+
$99999.99999
500+
$98999.9999901
1000+
$97999.9999902
1500+
$96999.9999903
2000+
$95999.9999904
2500+
$94999.9999905
Exquisite packaging
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Infineon Technologies's FZ750R65KE3C1NOSA1 stands out in the Transistors - IGBTs - Modules category with its revolutionary RC-IGBT design. This discrete semiconductor product merges the advantages of IGBTs and diodes in a single chip for compact power solutions. The module boasts exceptional features like: 650V-1700V voltage range, solderless press-fit contacts, and humidity-resistant coating. It's particularly suited for photovoltaic inverters, uninterruptible power supplies, and medical imaging equipment. For example, the FZ750R65KE3C1NOSA1 enables higher power density in MRI gradient amplifiers. Choose Infineon Technologies for IGBT modules that push performance boundaries.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Switch
- Voltage - Collector Emitter Breakdown (Max): 6500 V
- Current - Collector (Ic) (Max): 750 A
- Power - Max: 3000000 W
- Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 750A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 205 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -50°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: A-IHV190-6
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