BSM600D12P3G001
Rohm Semiconductor
Rohm Semiconductor
1200V, 576A, HALF BRIDGE, FULL S
$2,142.00
Available to order
Reference Price (USD)
1+
$2142.00000
500+
$2120.58
1000+
$2099.16
1500+
$2077.74
2000+
$2056.32
2500+
$2034.9
Exquisite packaging
Discount
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The BSM600D12P3G001 by Rohm Semiconductor is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the BSM600D12P3G001 ensures consistent and dependable performance. Rohm Semiconductor's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 182mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V
- Power - Max: 2450W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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