BSO220N03MDGXUMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 30V 6A 8DSO
$1.06
Available to order
Reference Price (USD)
2,500+
$0.39359
5,000+
$0.36934
12,500+
$0.35721
25,000+
$0.35060
Exquisite packaging
Discount
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Optimize your electronic projects with the BSO220N03MDGXUMA1 from Infineon Technologies, a leading option in the Discrete Semiconductor Products market. As a Transistors - FETs, MOSFETs - Arrays device, it provides fast switching speeds and low conduction losses, essential for high-efficiency applications. Ideal for use in server power supplies, battery management systems, and RF amplifiers, the BSO220N03MDGXUMA1 ensures top-notch performance. Infineon Technologies's expertise in semiconductor technology guarantees a product you can rely on.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6A
- Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
- Vgs(th) (Max) @ Id: 2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
- Power - Max: 1.4W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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