DMN2016UTS-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 20V 8.58A 8-TSSOP
$0.66
Available to order
Reference Price (USD)
2,500+
$0.24765
5,000+
$0.23335
12,500+
$0.21905
25,000+
$0.20904
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance DMN2016UTS-13 from Diodes Incorporated, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the DMN2016UTS-13 delivers unmatched performance. Trust Diodes Incorporated's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Drain
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 8.58A
- Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V
- Power - Max: 880mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: 8-TSSOP
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