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BSP149L6906HTSA1

Infineon Technologies
BSP149L6906HTSA1 Preview
Infineon Technologies
MOSFET N-CH 200V 660MA SOT223-4
$0.67
Available to order
Reference Price (USD)
1+
$0.67000
500+
$0.6633
1000+
$0.6566
1500+
$0.6499
2000+
$0.6432
2500+
$0.6365
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
  • Vgs(th) (Max) @ Id: 1V @ 400µA
  • Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.8W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4-21
  • Package / Case: TO-261-4, TO-261AA

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