BSZ011NE2LS5IATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 25V 35A/40A TSDSON
$3.19
Available to order
Reference Price (USD)
1+
$3.19000
500+
$3.1581
1000+
$3.1262
1500+
$3.0943
2000+
$3.0624
2500+
$3.0305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSZ011NE2LS5IATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BSZ011NE2LS5IATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
Related Products
Fairchild Semiconductor
FDPF680N10T
Texas Instruments
CSD25202W15
Fairchild Semiconductor
SSS4N60BT
Diodes Incorporated
ZVN0545GTA
Infineon Technologies
IRFB3206GPBF
Fairchild Semiconductor
HUF75545S3
Taiwan Semiconductor Corporation
TSM3401CX RFG
Infineon Technologies
IPP80N06S2L06AKSA2
Rohm Semiconductor
SCT3160KW7TL
Vishay Siliconix