SIHG052N60EF-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 600V 48A TO247AC
$7.06
Available to order
Reference Price (USD)
1+
$7.06000
500+
$6.9894
1000+
$6.9188
1500+
$6.8482
2000+
$6.7776
2500+
$6.707
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The SIHG052N60EF-GE3 from Vishay Siliconix redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the SIHG052N60EF-GE3 offers the precision and reliability you need. Trust Vishay Siliconix to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 23A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 3380 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 278W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AC
- Package / Case: TO-247-3
Related Products
Rohm Semiconductor
RSH065N06GZETB
Vishay Siliconix
SIR580DP-T1-RE3
Infineon Technologies
BSS119NH6327XTSA1
Infineon Technologies
SPB04N50C3
STMicroelectronics
STE53NC50
Infineon Technologies
SPB42N03S2L-13
onsemi
MVGSF1N03LT1G
STMicroelectronics
STI4N62K3
IXYS
IXTH360N055T2
IXYS