BSZ130N03LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 10A/35A 8TSDSON
$0.87
Available to order
Reference Price (USD)
5,000+
$0.25245
10,000+
$0.24310
25,000+
$0.23800
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BSZ130N03LSGATMA1 from Infineon Technologies sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Infineon Technologies's BSZ130N03LSGATMA1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FDMT80040DC
Vishay Siliconix
IRFP260PBF
Infineon Technologies
IRF8113TRPBF
Vishay Siliconix
IRFR9220TRPBF-BE3
PN Junction Semiconductor
P3M12025K3
Infineon Technologies
IAUT300N08S5N012ATMA2
Alpha & Omega Semiconductor Inc.
AONR34332C
Vishay Siliconix
SIHB30N60AEL-GE3
Infineon Technologies
IPP80N06S207AKSA1
Microchip Technology