P3M12025K3
PN Junction Semiconductor
PN Junction Semiconductor
SICFET N-CH 1200V 113A TO-247-3
$28.74
Available to order
Reference Price (USD)
1+
$28.74000
500+
$28.4526
1000+
$28.1652
1500+
$27.8778
2000+
$27.5904
2500+
$27.303
Exquisite packaging
Discount
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Optimize your power electronics with the P3M12025K3 single MOSFET from PN Junction Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the P3M12025K3 combines cutting-edge technology with PN Junction Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 113A
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 2.4V @ 17.7mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +21V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 524W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3L
- Package / Case: TO-247-3
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