BUK6610-75C,118
NXP Semiconductors
NXP Semiconductors
NEXPERIA BUK6610 - N-CHANNEL TRE
$0.41
Available to order
Reference Price (USD)
800+
$0.64933
1,600+
$0.58674
2,400+
$0.54763
5,600+
$0.52024
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The BUK6610-75C,118 from NXP Semiconductors redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the BUK6610-75C,118 offers the precision and reliability you need. Trust NXP Semiconductors to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 158W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Diodes Incorporated
DMP2123L-7
Microchip Technology
APT20M20JLL
Alpha & Omega Semiconductor Inc.
AO4453
Diodes Incorporated
DMN3071LFR4-7R
onsemi
MMFT1N10ET1
onsemi
FDS6675BZ
Rohm Semiconductor
QS5U36TR
STMicroelectronics
STB18NF25
Rohm Semiconductor
SCT3040KRC14
Infineon Technologies