IPBE65R075CFD7AATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 32A TO263-7
$13.28
Available to order
Reference Price (USD)
1+
$13.28000
500+
$13.1472
1000+
$13.0144
1500+
$12.8816
2000+
$12.7488
2500+
$12.616
Exquisite packaging
Discount
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The IPBE65R075CFD7AATMA1 from Infineon Technologies redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the IPBE65R075CFD7AATMA1 offers the precision and reliability you need. Trust Infineon Technologies to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 16.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 820µA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-3-10
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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