SCT3040KRC14
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 55A TO247-4L
$56.59
Available to order
Reference Price (USD)
1+
$56.59000
500+
$56.0241
1000+
$55.4582
1500+
$54.8923
2000+
$54.3264
2500+
$53.7605
Exquisite packaging
Discount
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Optimize your power electronics with the SCT3040KRC14 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCT3040KRC14 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 20A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 1337 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 262W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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