BUK9107-55ATE,118
NXP USA Inc.
NXP USA Inc.
NOW NEXPERIA BUK9107-55ATE -
$1.04
Available to order
Reference Price (USD)
1+
$1.04000
500+
$1.0296
1000+
$1.0192
1500+
$1.0088
2000+
$0.9984
2500+
$0.988
Exquisite packaging
Discount
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The BUK9107-55ATE,118 from NXP USA Inc. sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to NXP USA Inc.'s BUK9107-55ATE,118 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 5 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 5836 pF @ 25 V
- FET Feature: Temperature Sensing Diode
- Power Dissipation (Max): 272W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-426
- Package / Case: TO-263-5, D²Pak (4 Leads + Tab), TO-263BB
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