BYG21M-E3/TR3
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 1.5A
$0.44
Available to order
Reference Price (USD)
7,500+
$0.12140
15,000+
$0.11458
37,500+
$0.11117
Exquisite packaging
Discount
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The BYG21M-E3/TR3 from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's BYG21M-E3/TR3 for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Avalanche
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 120 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
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