CSD16406Q3
Texas Instruments
Texas Instruments
MOSFET N-CH 25V 19A/60A 8VSON
$1.23
Available to order
Reference Price (USD)
2,500+
$0.45220
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CSD16406Q3 from Texas Instruments sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Texas Instruments's CSD16406Q3 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 4.5 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 12.5 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
- Package / Case: 8-PowerTDFN
Related Products
Renesas Electronics America Inc
RJK0455DPB-00#J5
Texas Instruments
CSD17307Q5A
Rectron USA
RM130N200HD
Infineon Technologies
IPP023N10N5AKSA1
Texas Instruments
CSD18532Q5B
Infineon Technologies
BSC019N04LSTATMA1
Rohm Semiconductor
RQ1E100XNTR
IXYS
IXTX8N150L
Panjit International Inc.
PJA3401_R1_00001
IXYS