CSD17579Q3AT
Texas Instruments
Texas Instruments
MOSFET N-CH 30V 20A 8VSON
$1.28
Available to order
Reference Price (USD)
1+
$1.28000
500+
$1.2672
1000+
$1.2544
1500+
$1.2416
2000+
$1.2288
2500+
$1.216
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CSD17579Q3AT from Texas Instruments redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the CSD17579Q3AT offers the precision and reliability you need. Trust Texas Instruments to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 10.2mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id: 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 998 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSONP (3x3.3)
- Package / Case: 8-PowerVDFN
Related Products
Infineon Technologies
IPI80N04S3-03
Alpha & Omega Semiconductor Inc.
AOB095A60L
Micro Commercial Co
SI2310-TP
Panjit International Inc.
PJA3411-AU_R1_000A1
Infineon Technologies
IPB60R199CPATMA1
onsemi
FDB110N15A
Diodes Incorporated
DMN30H4D0LFDE-7
Microchip Technology
APT21M100J
onsemi
NTB25P06T4G
Microchip Technology