DMN30H4D0LFDE-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 300V 550MA 6UDFN
$0.57
Available to order
Reference Price (USD)
1+
$0.57000
500+
$0.5643
1000+
$0.5586
1500+
$0.5529
2000+
$0.5472
2500+
$0.5415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the DMN30H4D0LFDE-7 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMN30H4D0LFDE-7 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 187.3 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 630mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
Related Products
Microchip Technology
APT21M100J
onsemi
NTB25P06T4G
Microchip Technology
MSC035SMA070S
Vishay Siliconix
SISA18BDN-T1-GE3
IXYS
IXFR4N100Q
NXP USA Inc.
BUK9E1R9-40E,127
onsemi
NVMFS5C430NLAFT3G
Infineon Technologies
IRFB3207ZPBF
NXP USA Inc.
PSMN9R0-25YLC,115
IXYS