CSD18534KCS
Texas Instruments
Texas Instruments
MOSFET N-CH 60V 45A/100A TO220-3
$1.60
Available to order
Reference Price (USD)
1+
$1.40000
10+
$1.23800
50+
$1.12000
100+
$0.98260
500+
$0.76636
1,000+
$0.60915
2,500+
$0.56985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the CSD18534KCS by Texas Instruments, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the CSD18534KCS is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1880 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
SIHP25N50E-GE3
Toshiba Semiconductor and Storage
TK6A55DA(STA4,Q,M)
Rohm Semiconductor
RQ6E050ATTCR
Infineon Technologies
IPB80N06S209ATMA1
Infineon Technologies
IPS60R3K4CEAKMA1
Infineon Technologies
IRF6619TR1PBF
Vishay Siliconix
SQD50P04-13L_T4GE3
Toshiba Semiconductor and Storage
SSM6J412TU,LF
Rohm Semiconductor
RF4L055GNTCR
IXYS