CSD19502Q5BT
Texas Instruments
Texas Instruments
MOSFET N-CH 80V 100A 8VSON
$3.14
Available to order
Reference Price (USD)
250+
$1.72400
500+
$1.50850
750+
$1.36196
1,250+
$1.24990
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The CSD19502Q5BT by Texas Instruments is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Texas Instruments for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta), 195W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-VSON-CLIP (5x6)
- Package / Case: 8-PowerTDFN
Related Products
MDD
BSS84
Rohm Semiconductor
R6020JNZ4C13
Vishay Siliconix
SIHFL210TR-GE3
Renesas Electronics America Inc
RJK0349DSP-01#J0
Infineon Technologies
BSC014N04LSATMA1
Renesas Electronics America Inc
RJK0330DPB-01#J0
Vishay Siliconix
SIR880BDP-T1-RE3
Microchip Technology
APT58M50JU2
onsemi
5HP01M-TL-E
STMicroelectronics