DDA143TUQ-13-F
Diodes Incorporated
Diodes Incorporated
PREBIAS TRANSISTOR SOT363 T&R 10
$0.06
Available to order
Reference Price (USD)
1+
$0.06326
500+
$0.0626274
1000+
$0.0619948
1500+
$0.0613622
2000+
$0.0607296
2500+
$0.060097
Exquisite packaging
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The DDA143TUQ-13-F by Diodes Incorporated is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Diodes Incorporated's state-of-the-art production facilities ensure that the DDA143TUQ-13-F delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SOT-363
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