RN4988FE,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPN + PNP BRT Q1BSR22KOHM Q1BER4
$0.04
Available to order
Reference Price (USD)
1+
$0.04389
500+
$0.0434511
1000+
$0.0430122
1500+
$0.0425733
2000+
$0.0421344
2500+
$0.0416955
Exquisite packaging
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Introducing Toshiba Semiconductor and Storage's RN4988FE,LF(CT, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Toshiba Semiconductor and Storage's dedication to excellence ensures that the RN4988FE,LF(CT meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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Toshiba Semiconductor and Storage