RN4982,LXHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q 2-IN-1 (POINT-SYM) NP
$0.46
Available to order
Reference Price (USD)
1+
$0.46000
500+
$0.4554
1000+
$0.4508
1500+
$0.4462
2000+
$0.4416
2500+
$0.437
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Toshiba Semiconductor and Storage's RN4982,LXHF(CT, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Toshiba Semiconductor and Storage's dedication to excellence ensures that the RN4982,LXHF(CT meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
Toshiba Semiconductor and Storage
RN2606(TE85L,F)
onsemi
NSBC113EPDXV6T1G
Rohm Semiconductor
EMB11T2R
Rohm Semiconductor
UMD3NTR
onsemi
NSVMUN5333DW1T1G
Nexperia USA Inc.
PQMH13Z
Infineon Technologies
BCR10PNH6727XTSA1
Panasonic Electronic Components
UP04113G0L
Toshiba Semiconductor and Storage
RN1710,LF
Rohm Semiconductor