PUMH13,115
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V 6TSSOP
$0.30
Available to order
Reference Price (USD)
3,000+
$0.05727
6,000+
$0.04980
15,000+
$0.04233
30,000+
$0.03984
75,000+
$0.03735
150,000+
$0.03486
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the versatility of Nexperia USA Inc.'s PUMH13,115, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The PUMH13,115 is widely used in IoT devices, medical equipment, and renewable energy systems. Nexperia USA Inc.'s advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the PUMH13,115 offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: 6-TSSOP
Related Products
Rohm Semiconductor
EMA4T2R
Rohm Semiconductor
EMG4T2R
Rohm Semiconductor
EMH51T2R
onsemi
MUN5133DW1T1
Nexperia USA Inc.
PBLS4005Y,115
Toshiba Semiconductor and Storage
RN4982,LXHF(CT
Toshiba Semiconductor and Storage
RN2606(TE85L,F)
onsemi
NSBC113EPDXV6T1G
Rohm Semiconductor
EMB11T2R
Rohm Semiconductor