DF11MR12W1M1PB11BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE 1200V
$163.34
Available to order
Reference Price (USD)
1+
$163.34000
500+
$161.7066
1000+
$160.0732
1500+
$158.4398
2000+
$156.8064
2500+
$155.173
Exquisite packaging
Discount
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The DF11MR12W1M1PB11BPSA1 by Infineon Technologies is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the DF11MR12W1M1PB11BPSA1 provides reliable operation under stringent conditions. Infineon Technologies's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Last Time Buy
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
- Rds On (Max) @ Id, Vgs: 22.5mOhm @ 50A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 124nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 800V
- Power - Max: 20mW
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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