SI7252DP-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET 2N-CH 100V 36.7A PPAK 8SO
$2.27
Available to order
Reference Price (USD)
3,000+
$1.10950
6,000+
$1.07100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the high-performance SI7252DP-T1-GE3 from Vishay Siliconix, a premium addition to our Discrete Semiconductor Products collection. This Transistors - FETs, MOSFETs - Arrays component is engineered for efficiency and reliability, offering exceptional switching speeds and low power consumption. Ideal for power management and amplification circuits, this MOSFET array ensures minimal heat generation and superior durability. Whether you're designing industrial automation systems, automotive electronics, or consumer gadgets, the SI7252DP-T1-GE3 delivers unmatched performance. Trust Vishay Siliconix's cutting-edge technology to meet your demanding application needs.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 36.7A
- Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1170pF @ 50V
- Power - Max: 46W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® SO-8 Dual
- Supplier Device Package: PowerPAK® SO-8 Dual
Related Products
Diodes Incorporated
DMN61D8LVTQ-7
Panjit International Inc.
PJX8804_R1_00001
Diodes Incorporated
DMC2053UVTQ-13
onsemi
NTHD2102PT1
Rohm Semiconductor
EM6K31T2R
Panjit International Inc.
PJL9836A_R2_00001
Panasonic Electronic Components
FCAB21490L1
Infineon Technologies
DF11MR12W1M1B11BOMA1
Renesas Electronics America Inc
FS50KM-06#B00
Sanyo