DF150R12RT4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 150A 790W
$51.01
Available to order
Reference Price (USD)
10+
$52.09700
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DF150R12RT4HOSA1 by Infineon Technologies redefines performance in the IGBT modules segment of Discrete Semiconductor Products. Featuring sixth-generation field-stop technology, this power transistor delivers optimal switching characteristics and short-circuit withstand capability. Key attributes include: 175 C maximum junction temperature, low EMI generation, and integrated current sensing. Industrial applications span from elevator drives and CNC machinery to large-scale HVAC systems. A practical implementation would be using the DF150R12RT4HOSA1 in high-efficiency servo controllers for manufacturing automation. Infineon Technologies combines innovation with quality in every DF150R12RT4HOSA1 module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Single Chopper
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 790 W
- Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FS150R12KT4PBPSA1
Infineon Technologies
FP150R07N3E4B11BOSA1
Infineon Technologies
FZ1200R17HP4HOSA2
Infineon Technologies
FZ600R65KE3NOSA1
Infineon Technologies
FF300R17KE3HOSA1
STMicroelectronics
A2C50S65M2-F
Microchip Technology
APTGT75DA60T1G
Microchip Technology
APT75GN120JDQ3
Infineon Technologies
FP75R12KT4PB11BPSA1
Infineon Technologies