FP150R07N3E4B11BOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 650V 150A 430W
$134.70
Available to order
Reference Price (USD)
10+
$143.00900
Exquisite packaging
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Experience next-generation power control with Infineon Technologies's FP150R07N3E4B11BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FP150R07N3E4B11BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FP150R07N3E4B11BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FP150R07N3E4B11BOSA1 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Three Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 430 W
- Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
- Current - Collector Cutoff (Max): 1 mA
- Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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