DMHC10H170SFJ-13
Diodes Incorporated
Diodes Incorporated
MOSFET 2N/2P-CH 100V DFN5045-12
$1.35
Available to order
Reference Price (USD)
3,000+
$0.61770
6,000+
$0.59037
15,000+
$0.57084
Exquisite packaging
Discount
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The DMHC10H170SFJ-13 by Diodes Incorporated is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the DMHC10H170SFJ-13 ensures consistent and dependable performance. Diodes Incorporated's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 2.9A, 2.3A
- Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1167pF @ 25V
- Power - Max: 2.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 12-VDFN Exposed Pad
- Supplier Device Package: V-DFN5045-12
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