DMN2029UVT-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 6.8A TSOT26
$0.11
Available to order
Reference Price (USD)
1+
$0.10894
500+
$0.1078506
1000+
$0.1067612
1500+
$0.1056718
2000+
$0.1045824
2500+
$0.103493
Exquisite packaging
Discount
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The DMN2029UVT-13 from Diodes Incorporated sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Diodes Incorporated's DMN2029UVT-13 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-26
- Package / Case: SOT-23-6 Thin, TSOT-23-6
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