DMN2053UW-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 2.9A SOT323
$0.49
Available to order
Reference Price (USD)
1+
$0.49000
500+
$0.4851
1000+
$0.4802
1500+
$0.4753
2000+
$0.4704
2500+
$0.4655
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN2053UW-7 by Diodes Incorporated is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Diodes Incorporated for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.25 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 470mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Microchip Technology
APT30M19JVFR
Diodes Incorporated
DMP3160L-7
STMicroelectronics
STP7N90K5
STMicroelectronics
STN1NK80Z
Toshiba Semiconductor and Storage
SSM3J372R,LXHF
Microchip Technology
VN2410L-G-P014
Rohm Semiconductor
US5U3TR
Fairchild Semiconductor
IRF610B
Rohm Semiconductor
R6511ENJTL
Panjit International Inc.