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DMN2075UDW-7

Diodes Incorporated
DMN2075UDW-7 Preview
Diodes Incorporated
MOSFET N-CH 20V 2.8A SOT363
$0.46
Available to order
Reference Price (USD)
3,000+
$0.13863
6,000+
$0.13106
15,000+
$0.12350
30,000+
$0.11441
75,000+
$0.11063
Exquisite packaging
Discount
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Specifications

  • Product Status: Not For New Designs
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 48mOhm @ 3A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 594.3 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-363
  • Package / Case: 6-TSSOP, SC-88, SOT-363

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