DMN2300UFL4Q-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V X2-DFN1310-
$0.15
Available to order
Reference Price (USD)
1+
$0.15210
500+
$0.150579
1000+
$0.149058
1500+
$0.147537
2000+
$0.146016
2500+
$0.144495
Exquisite packaging
Discount
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Elevate your electronics with the DMN2300UFL4Q-7 from Diodes Incorporated, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the DMN2300UFL4Q-7 provides the reliability and efficiency you need. Diodes Incorporated's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
- Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
- Power - Max: 530mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-XFDFN
- Supplier Device Package: X2-DFN1310-6
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