DMN3016LDN-7
Diodes Incorporated
Diodes Incorporated
MOSFET 2N-CH 30V 7.3A 8VDFN
$0.21
Available to order
Reference Price (USD)
3,000+
$0.18600
Exquisite packaging
Discount
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The DMN3016LDN-7 by Diodes Incorporated is a superior addition to the Discrete Semiconductor Products inventory. As a Transistors - FETs, MOSFETs - Arrays device, it features low threshold voltage and high switching speed, ideal for energy-efficient designs. Suitable for applications like smart home devices, power tools, and HVAC systems, the DMN3016LDN-7 ensures consistent and dependable performance. Diodes Incorporated's commitment to quality ensures this MOSFET array exceeds expectations.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 7.3A
- Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 25.1nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1415pF @ 15V
- Power - Max: 1.1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerWDFN
- Supplier Device Package: V-DFN3030-8 (Type J)
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