DMN30H4D1S-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 300V 430MA SOT23
$0.11
Available to order
Reference Price (USD)
1+
$0.11035
500+
$0.1092465
1000+
$0.108143
1500+
$0.1070395
2000+
$0.105936
2500+
$0.1048325
Exquisite packaging
Discount
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The DMN30H4D1S-7 single MOSFET from Diodes Incorporated is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the DMN30H4D1S-7 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 4Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 174 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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