DMN61D9UT-13
Diodes Incorporated
Diodes Incorporated
2N7002 FAMILY SOT523 T&R 10K
$0.05
Available to order
Reference Price (USD)
1+
$0.04825
500+
$0.0477675
1000+
$0.047285
1500+
$0.0468025
2000+
$0.04632
2500+
$0.0458375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The DMN61D9UT-13 single MOSFET from Diodes Incorporated is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the DMN61D9UT-13 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 260mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-523
- Package / Case: SOT-523
Related Products
Panjit International Inc.
PJQ4408P_R2_00001
IXYS
IXFK24N80P
Renesas Electronics America Inc
2SK3479-Z-E1-AZ
Infineon Technologies
AUIRFP4110
Toshiba Semiconductor and Storage
TW070J120B,S1Q
Infineon Technologies
IPP60R600P6XKSA1
Rohm Semiconductor
R6020KNXC7G
Alpha & Omega Semiconductor Inc.
AOSS21311C
Vishay Siliconix
SIHFS11N50A-GE3
Panjit International Inc.