DMN63D1L-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 380MA SOT23
$0.04
Available to order
Reference Price (USD)
10,000+
$0.03933
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the DMN63D1L-13 from Diodes Incorporated, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the DMN63D1L-13 ensures reliable performance in demanding environments. Upgrade your circuit designs with Diodes Incorporated's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 0.3 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 370mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Infineon Technologies
IRFP048NPBF
Vishay Siliconix
SIHB33N60ET5-GE3
Rohm Semiconductor
RS1L120GNTB
Microchip Technology
APT10026L2LLG
STMicroelectronics
STL100N8F7
Microchip Technology
APT34M60S/TR
IXYS
IXFR24N90P
Nexperia USA Inc.
2N7002HWX
Fairchild Semiconductor
ISL9N318AD3ST
Fairchild Semiconductor