DMP2008USS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SO-8 T&R 2.
$0.34
Available to order
Reference Price (USD)
1+
$0.34021
500+
$0.3368079
1000+
$0.3334058
1500+
$0.3300037
2000+
$0.3266016
2500+
$0.3231995
Exquisite packaging
Discount
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The DMP2008USS-13 from Diodes Incorporated redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the DMP2008USS-13 offers the precision and reliability you need. Trust Diodes Incorporated to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 9mOhm @12A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 6820 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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