DMT10H015LCG-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V 9.4A/34A 8DFN
$0.44
Available to order
Reference Price (USD)
3,000+
$0.46980
Exquisite packaging
Discount
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Enhance your electronic projects with the DMT10H015LCG-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMT10H015LCG-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: V-DFN3333-8
- Package / Case: 8-PowerVDFN
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