DMT67M8LSS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V SO-8 T&R 2
$0.36
Available to order
Reference Price (USD)
1+
$0.36015
500+
$0.3565485
1000+
$0.352947
1500+
$0.3493455
2000+
$0.345744
2500+
$0.3421425
Exquisite packaging
Discount
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Enhance your electronic projects with the DMT67M8LSS-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMT67M8LSS-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.6mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 37.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2130 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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