DMTH8001STLW-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI10
$3.01
Available to order
Reference Price (USD)
1+
$3.00762
500+
$2.9775438
1000+
$2.9474676
1500+
$2.9173914
2000+
$2.8873152
2500+
$2.857239
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Meet the DMTH8001STLW-13 by Diodes Incorporated, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The DMTH8001STLW-13 stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Diodes Incorporated.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 270A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8894 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 6W (Ta), 250W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: POWERDI1012-8
- Package / Case: 8-PowerSFN
Related Products
Infineon Technologies
AUIRFS4127TRL
Diodes Incorporated
DMN4035LQ-13
onsemi
FQB19N20CTM
Alpha & Omega Semiconductor Inc.
AOTF290L
Infineon Technologies
IRFI3306GPBF
Diodes Incorporated
DMN2011UFDF-13
Renesas Electronics America Inc
2SK3984-ZK-E1-AY
Rohm Semiconductor
R6006JND3TL1
Vishay Siliconix
SIRA84BDP-T1-GE3
Infineon Technologies