DMN2011UFDF-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 20V 14.2A 6UDFN
$0.16
Available to order
Reference Price (USD)
1+
$0.15750
500+
$0.155925
1000+
$0.15435
1500+
$0.152775
2000+
$0.1512
2500+
$0.149625
Exquisite packaging
Discount
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Enhance your electronic projects with the DMN2011UFDF-13 single MOSFET from Diodes Incorporated. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Diodes Incorporated's DMN2011UFDF-13 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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