R6006JND3TL1
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 6A TO252
$2.54
Available to order
Reference Price (USD)
1+
$2.54000
500+
$2.5146
1000+
$2.4892
1500+
$2.4638
2000+
$2.4384
2500+
$2.413
Exquisite packaging
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Optimize your power electronics with the R6006JND3TL1 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the R6006JND3TL1 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 15V
- Rds On (Max) @ Id, Vgs: 936mOhm @ 3A, 15V
- Vgs(th) (Max) @ Id: 7V @ 800µA
- Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 15 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 410 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 86W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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