DTC623TUT106
Rohm Semiconductor
Rohm Semiconductor
TRANS PREBIAS NPN 200MW UMT3
$0.39
Available to order
Reference Price (USD)
3,000+
$0.09882
6,000+
$0.09333
15,000+
$0.08510
30,000+
$0.07961
75,000+
$0.07686
Exquisite packaging
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Engineers choose DTC623TUT106 for its exceptional linearity in amplification circuits. Rohm Semiconductor's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 150 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: UMT3
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