DXTN03100BFG-7
Diodes Incorporated
Diodes Incorporated
PWR MID PERF TRANSISTOR POWERDI3
$0.25
Available to order
Reference Price (USD)
1+
$0.24580
500+
$0.243342
1000+
$0.240884
1500+
$0.238426
2000+
$0.235968
2500+
$0.23351
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with the DXTN03100BFG-7 Bipolar Junction Transistor (BJT) from Diodes Incorporated. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the DXTN03100BFG-7 delivers superior performance in diverse environments. Diodes Incorporated's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
- Current - Collector Cutoff (Max): 50nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
- Power - Max: 1.2 W
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Related Products
Microchip Technology
2N5630
Microchip Technology
2N2432UB
Rohm Semiconductor
2SAR544PHZGT100
onsemi
2SC5226-4-TL-E
Renesas Electronics America Inc
2SD768K01-E#00
Harris Corporation
GE10020
Renesas Electronics America Inc
2SC3736-T1-AZ
Microchip Technology
2N7369
onsemi
2SC3143-4-TB-E
Microchip Technology