EMD4DXV6T1G
onsemi
onsemi
TRANS PREBIAS NPN/PNP 50V SOT563
$0.09
Available to order
Reference Price (USD)
1+
$0.09216
500+
$0.0912384
1000+
$0.0903168
1500+
$0.0893952
2000+
$0.0884736
2500+
$0.087552
Exquisite packaging
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Discover the versatility of onsemi's EMD4DXV6T1G, a pre-biased BJT array tailored for modern electronics. This transistor array combines high current gain with low saturation voltage, making it ideal for switching and linear amplification. Its compact design and integrated resistors save PCB space while enhancing reliability. The EMD4DXV6T1G is widely used in IoT devices, medical equipment, and renewable energy systems. onsemi's advanced fabrication techniques guarantee consistent performance, even under high-stress conditions. Whether for prototyping or mass production, the EMD4DXV6T1G offers a cost-effective solution for your semiconductor needs.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms, 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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