EPC2100ENGRT
EPC
EPC
GANFET 2 N-CH 30V 9.5A/38A DIE
$5.18
Available to order
Reference Price (USD)
500+
$4.71200
1,000+
$4.25600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2100ENGRT from EPC is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the EPC2100ENGRT provides reliable performance in demanding environments. Choose EPC for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
onsemi
FDMA1027P
Rohm Semiconductor
QS6J11TR
Alpha & Omega Semiconductor Inc.
AON5816
onsemi
FDMD8560L
onsemi
NVMFD5852NLWFT1G
Panjit International Inc.
PJS6801_S1_00001
Panjit International Inc.
PJS6833_S2_00001
onsemi
EMH2604-TL-H
Panjit International Inc.
PJQ4602_R1_00001
Rohm Semiconductor