FDA59N30
onsemi
onsemi
MOSFET N-CH 300V 59A TO3PN
$4.21
Available to order
Reference Price (USD)
1+
$4.00000
10+
$3.59000
450+
$2.68580
900+
$2.19919
1,350+
$2.06016
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FDA59N30 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FDA59N30 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PN
- Package / Case: TO-3P-3, SC-65-3
Related Products
Motorola
MPF4856RLRA
NXP Semiconductors
BUK7C10-75AITE,118
Microchip Technology
APT29F100L
Infineon Technologies
BSC057N03LSGATMA1
Toshiba Semiconductor and Storage
SSM3J36TU,LF
Nexperia USA Inc.
BUK6Y14-40PX
Infineon Technologies
IPP65R420CFDXKSA1
Infineon Technologies
IPA65R660CFDXKSA2
Infineon Technologies
IPB038N12N3GATMA1
Panjit International Inc.