FDB86360-F085
onsemi
onsemi
MOSFET N-CH 80V 110A D2PAK
$5.30
Available to order
Reference Price (USD)
800+
$2.65930
1,600+
$2.48202
2,400+
$2.35792
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FDB86360-F085 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FDB86360-F085 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 333W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
STMicroelectronics
STP12N65M5
Toshiba Semiconductor and Storage
TK100L60W,VQ
Infineon Technologies
ISC0805NLSATMA1
onsemi
FCHD190N65S3R0-F155
Vishay Siliconix
IRFB18N50KPBF
Infineon Technologies
AUIRL1404S
Infineon Technologies
BSC039N06NSATMA1
Nexperia USA Inc.
BUK7M10-40EX
Vishay Siliconix
SI4403DDY-T1-GE3
Toshiba Semiconductor and Storage